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Solid State Electronics Center
Providing best value specialized semiconductor
and sensor solutions since 1965
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| Honeywell > DSES > SSEC |
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SOI-IV |
SOI-V |
SOI-VI |
SOI-150 |
MOI-IV |
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Min
Feature (µm)
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0.7
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0.35
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0.25
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0.15
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0.8
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Substrate
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SOI
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SOI
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SOI
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SOI
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SOI
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Gate
Oxide (Angstroms)
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150
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80
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55
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30
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225
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Isolation
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SHARP
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SHARP
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SHARP
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STI
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MESA
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Ln/Lp
(Drawn, um)
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0.7/0.8
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0.35/0.35
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0.25/0.25
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0.15/0.15
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0.8/0.8
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Planarization
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PR/Etch
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SOG/CMP
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SOG/CMP
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CMP
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SOG
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Contact/Via
Plugs
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No/W
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W/W
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W/W
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W/W
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No/No
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Local
Interconnect
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Yes
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Yes
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Yes
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Yes
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Yes
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Metal
Layers
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4
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4
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4
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6
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2
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| Integratable
Discretes |
Lin
Cap
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Lin
Cap
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Lin
Cap
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R, L and C |
R,
L and C
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Power
Supply (Volts)
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5/3.3
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3.3/2.5
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2.5/1.8
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3.3/2.5/1.8
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5/3.3
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NMOS
Ft (GHz)
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12
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| PMOS
Ft (GHz) |
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13
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SRAM
Density
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256K
Bit
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1M
Bit
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4M
Bit
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16M Bit
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Useable
ASIC Logic (Gates)
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290,000
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2,000,000
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6,000,000
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10,000,000
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Production
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Now
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Now
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Now
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Now
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Now
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